to-220 -3l 1. base 2. collector 3. emitter jiangsu changjiang electron ics technology co., ltd to-220 -3l plastic-encapsulate transistors TIP31/31a/31b/31c transistor (npn) fe a t ures medium power linear switching applications maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless other wise specified) parameter symbol test conditions min m ax unit collector-base breakdown voltage t i p31 tip3 1 a TIP31b TIP31c v (br) cbo i c = 1ma, i e =0 40 60 80 100 v collector-emitter breakdown voltage * TIP31 tip3 1 a TIP31b TIP31c v ceo (sus) i c = 30ma, i b =0 40 60 80 100 v emitter-base breakdown voltage v (br) ebo i e = 1ma, i c =0 5 v collector cut-off current TIP31 tip3 1 a TIP31b TIP31c i cbo v cb =40v, i e =0 v cb =60v, i e =0 v cb =80v, i e =0 v cb =100v, i e =0 200 a collector cut-off current TIP31/31a TIP31b/31c i ceo v ce = 30v, i b = 0 v ce = 60v, i b = 0 0.3 ma emitter cut-off current i ebo v eb =5v, i c =0 1 ma h fe(1) v ce = 4v, i c = 1a 25 dc current gain h fe(2) v ce =4 v, i c = 3a 1 5 75 collector-emitter saturation voltage v ce(sat) i c =3a, i b =0.375a 1.2 v base-emitter voltage v be(on) v ce = 4v, i c =3a 1.8 v transition frequency f t v ce =10v , i c =0.5a 3 mh z * pulse test: pw 300s, duty cycle 2% . symbol parameter tip3 1 tip3 1 a t ip3 1 b tip3 1 c u nit v cbo collector-base voltage 40 60 80 100 v v ceo collector-emitter voltage 40 60 80 100 v v ebo emitter-base voltage 5 v i c collector current 3 a p c collector power dissipation 2 w r ja thermal resistance from junction to ambient 62.5 t j junction temperature 150 t stg storage temperature -55~+150 www.cj-elec.com 1 e,nov,2014
0.1 1 10 10 100 1000 10 100 0 5 10 15 20 25 30 1e-3 0.01 0.1 1 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 150 0 1 2 3 1e-4 1e-3 0.01 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-4 1e-3 0.01 0.1 1 0 100 200 300 400 012345678 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1e-4 1e-3 0.01 0.1 1 20 f=1mhz i e =0 / i c =0 t a =25 o c TIP31/31a/31b/31c typical characteristics reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob 2000 500 transition frequency f t (mhz) collector current i c (ma) v ce =10v t a =25 o c i c f t ?? 3 v ce = 4v t a =100 o c t a =25 o c collector current i c (a) dc current gain h fe i c h fe ?? collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a 3 collector current i c (a) base-emitter saturation voltage v besat (v) t a =25 t a =100 =8 i c v besat ?? 3 3 t a =25 t a =100 =8 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (a) common emitter t a =25 20ma 18ma 16ma 14ma 12ma 10ma 8ma 6ma 4ma i b =2ma collector-emitter voltage v ce (v) collector current i c (a) static characteristic vce=4v ta=25 ta=100 o c base-emitter voltage v be (v) collector current i c (a) v be ?? i c www.cj-elec.com 2 e,nov,2014 typical characteristics
www.cj-elec.com 3 e,nov,2014 to-220-3l package outline dimensions m i n m ax m i n m ax a 4. 4 70 4. 67 0 0 . 17 6 0. 1 84 a 1 2 . 52 0 2 . 8 20 0. 0 99 0 . 11 1 b 0. 7 10 0. 91 0 0 . 02 8 0. 0 36 b1 1 . 17 0 1 . 3 70 0. 0 46 0 . 05 4 c 0. 3 10 0. 53 0 0 . 01 2 0. 0 21 c 1 1 . 17 0 1 . 3 70 0. 0 46 0 . 05 4 d 10 . 01 0 10 . 31 0 0 . 39 4 0. 4 06 e 8. 5 00 8. 90 0 0 . 33 5 0. 3 50 e 1 12 . 06 0 12 . 46 0 0 . 47 5 0. 4 91 e e1 4 . 98 0 5 . 1 80 0. 1 96 0 . 20 4 f 2. 5 90 2. 89 0 0 . 10 2 0. 1 14 h 0. 0 00 0. 30 0 0 . 00 0 0. 0 12 l 13 . 40 0 13 . 80 0 0 . 52 8 0. 5 43 l1 3 . 56 0 3 . 9 60 0. 1 40 0 . 15 6 3 . 73 5 3 . 9 35 0. 1 47 0 . 15 5 sy m bo l d im e n s io n s in m illim e t e r s d im e n s io n s in in c h e s 0. 10 0 t y p 2 . 54 0 t y p
|
